LN12557 - The
fabrication of single-atom transistors is a breakthrough which is now
possible both by top-down and
bottom up approaches. Using standard microelectronics techniques we
made a transistor where the current is controlled by the fine tuning of
the ionization of two phosphorus atoms connected in series. Following
single-atom devices, this 2-atom transistor is
the next step towards controlled atomic functionalities in electronics.
Here we use the discrete ground level of one donor as a sharp energy
filter to probe the levels of a second donor. Our results show that the
energy spectrum for electrons bounded to a
phosphorus atom in a silicon nano device is reminiscent but differs
slightly from the spectrum of an isolated donor in a bulk silicon
crystal. The large energy separation (10 meV) between the ground and
first excited state arises from the sharp atomic confinement
potential is a good opportunity for clean atomic orbital's
manipulation.This is a blog compiling the latest physics news from the American Physical Society. News sources include lay summaries of Physical Review papers written by the papers' authors, APS Physics Tip Sheets from APS staff, and previews of talks from the Society's meetings.
Tuesday, April 24, 2012
Two Atom Transistor
LN12557 - The
fabrication of single-atom transistors is a breakthrough which is now
possible both by top-down and
bottom up approaches. Using standard microelectronics techniques we
made a transistor where the current is controlled by the fine tuning of
the ionization of two phosphorus atoms connected in series. Following
single-atom devices, this 2-atom transistor is
the next step towards controlled atomic functionalities in electronics.
Here we use the discrete ground level of one donor as a sharp energy
filter to probe the levels of a second donor. Our results show that the
energy spectrum for electrons bounded to a
phosphorus atom in a silicon nano device is reminiscent but differs
slightly from the spectrum of an isolated donor in a bulk silicon
crystal. The large energy separation (10 meV) between the ground and
first excited state arises from the sharp atomic confinement
potential is a good opportunity for clean atomic orbital's
manipulation.