LJ12852 - With the fast development of information storage, exploiting new concepts for dense, fast, and non-volatile random access memory with reduced energy consumption is a significant and challenging task. To realize this goal, electric-field control of magnetism is crucial. A promising way to control magnetism via electric fields is using the converse magnetoelectric effect, which is important for realizing high speed and low power writing memories. We report the first example of a large, switchable and non-volatile bipolar-electric-field-controlled magnetization at room temperature in a Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 ferromagnetic/ferroelectric (FM/FE) two-phase structure. Through investigations of the ferroelectric domains and crystal structures with in situ electric fields, we demonstrate a novel mechanism for electric-field control of magnetization involving the combined action of 109¡ã ferroelastic domain switching and absence of magnetocrystalline anisotropy in Co40Fe40B20. This work provides a route to realize electric-field control of large, switchable and non-volatile magnetism at room temperature, and similar phenomena should occur for other comparable FM/FE structures.
